All MOSFET. RU4N65P Datasheet

 

RU4N65P Datasheet and Replacement


   Type Designator: RU4N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220F
 

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RU4N65P Datasheet (PDF)

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RU4N65P

RU4N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/4A, RDS (ON) =2200m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion i

Datasheet: RU30P40M3 , RU40120L , RU40180R , RU4030M3 , RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , EMB04N03H , RU6035M3 , RU6051H , RU65110R , RU7N65L , RU82100R , RU9N65P , RUH008N15M-C , RUH120N140R .

History: NCE2323 | SFG10R10BF

Keywords - RU4N65P MOSFET datasheet

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