RU4N65P PDF and Equivalents Search

 

RU4N65P Specs and Replacement

Type Designator: RU4N65P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO220F

RU4N65P substitution

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RU4N65P datasheet

 ..1. Size:455K  ruichips
 ru4n65p.pdf pdf_icon

RU4N65P

RU4N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/4A, RDS (ON) =2200m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion i... See More ⇒

Detailed specifications: RU30P40M3, RU40120L, RU40180R, RU4030M3, RU40C20M3, RU40C40M, RU40L60L, RU40L60M, AON7403, RU6035M3, RU6051H, RU65110R, RU7N65L, RU82100R, RU9N65P, RUH008N15M-C, RUH120N140R

Keywords - RU4N65P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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