RU7N65L PDF and Equivalents Search

 

RU7N65L Specs and Replacement

Type Designator: RU7N65L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

RU7N65L substitution

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RU7N65L datasheet

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ru7n65l.pdf pdf_icon

RU7N65L

RU7N65L N-Channel Advanced Power MOSFET Features Pin Description 650V/7A, D RDS (ON) =1200m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D D D D D D D Applications pp AC/DC Power Conversio... See More ⇒

Detailed specifications: RU40C20M3, RU40C40M, RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R, MMIS60R580P, RU82100R, RU9N65P, RUH008N15M-C, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L, RUH120N35M3

Keywords - RU7N65L MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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