All MOSFET. RU7N65L Datasheet

 

RU7N65L Datasheet and Replacement


   Type Designator: RU7N65L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252
 

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RU7N65L Datasheet (PDF)

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RU7N65L

RU7N65LN-Channel Advanced Power MOSFETFeatures Pin Description 650V/7A,D RDS (ON) =1200m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GSTO252DDDDDDDApplicationspp AC/DC Power Conversio

Datasheet: RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R , STP65NF06 , RU82100R , RU9N65P , RUH008N15M-C , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 .

History: STC6301D | 4N65G-TMS2-T

Keywords - RU7N65L MOSFET datasheet

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