RU7N65L Datasheet and Replacement
Type Designator: RU7N65L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 158 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
RU7N65L substitution
RU7N65L Datasheet (PDF)
ru7n65l.pdf
RU7N65LN-Channel Advanced Power MOSFETFeatures Pin Description 650V/7A,D RDS (ON) =1200m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GSTO252DDDDDDDApplicationspp AC/DC Power Conversio
Datasheet: RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R , MMIS60R580P , RU82100R , RU9N65P , RUH008N15M-C , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 .
History: SP3900 | STC4516 | FDS86252 | SVS20N60TD2 | 7506 | SP2107 | SFT1341
Keywords - RU7N65L MOSFET datasheet
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RU7N65L replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: SP3900 | STC4516 | FDS86252 | SVS20N60TD2 | 7506 | SP2107 | SFT1341
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