RU7N65L Specs and Replacement
Type Designator: RU7N65L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
RU7N65L substitution
- MOSFET ⓘ Cross-Reference Search
RU7N65L datasheet
ru7n65l.pdf
RU7N65L N-Channel Advanced Power MOSFET Features Pin Description 650V/7A, D RDS (ON) =1200m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D D D D D D D Applications pp AC/DC Power Conversio... See More ⇒
Detailed specifications: RU40C20M3, RU40C40M, RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R, MMIS60R580P, RU82100R, RU9N65P, RUH008N15M-C, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L, RUH120N35M3
Keywords - RU7N65L MOSFET specs
RU7N65L cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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