RUH1H130S MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH1H130S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 288 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 298 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
RUH1H130S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH1H130S Datasheet (PDF)
ruh1h130s.pdf
RUH1H130SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,DRDS (ON) =5.8m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS
ruh1h138s.pdf
RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS
ruh1h139r.pdf
RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp
ruh1h139r-a.pdf
RUH1H139R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD
ruh1h139s.pdf
RUH1H139SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl
ruh1h138m-c.pdf
RUH1H138M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,RDS (ON) =3.6m(Typ.)@VGS=10VDRDS (ON) =4.5m(Typ.)@VGS=4.5VDD Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching SpeedG 100% Avalanche TestedSS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Syn
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: FIR9N90FG | FIR9N65LG | FIR9N50FG | FIR96N08PG | FIR8N80FG | FIR8N70FG | FIR8N65FG | FIR8N60FG | FIR80N10LG | FIR80N08PG | FIR80N03LG | FIR7NS70ALG | FIR7NS70AFG | FIR7NS65AFG | FIR6N90FG | FIR6N70FG