Справочник MOSFET. RUH1H130S

 

RUH1H130S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RUH1H130S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 288 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 74 nC
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 298 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO263

 Аналог (замена) для RUH1H130S

 

 

RUH1H130S Datasheet (PDF)

 ..1. Size:312K  ruichips
 ruh1h130s.pdf

RUH1H130S RUH1H130S

RUH1H130SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,DRDS (ON) =5.8m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.1. Size:312K  ruichips
 ruh1h138s.pdf

RUH1H130S RUH1H130S

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.2. Size:378K  ruichips
 ruh1h139r.pdf

RUH1H130S RUH1H130S

RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp

 7.3. Size:374K  ruichips
 ruh1h139r-a.pdf

RUH1H130S RUH1H130S

RUH1H139R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGT Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD

 7.4. Size:310K  ruichips
 ruh1h139s.pdf

RUH1H130S RUH1H130S

RUH1H139SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl

 7.5. Size:218K  ruichips
 ruh1h138m-c.pdf

RUH1H130S RUH1H130S

RUH1H138M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,RDS (ON) =3.6m(Typ.)@VGS=10VDRDS (ON) =4.5m(Typ.)@VGS=4.5VDD Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching SpeedG 100% Avalanche TestedSS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Syn

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top