All MOSFET. RUH1H138S Datasheet

 

RUH1H138S Datasheet and Replacement


   Type Designator: RUH1H138S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 294 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 138 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 78 nC
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

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RUH1H138S Datasheet (PDF)

 ..1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H138S

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 6.1. Size:218K  ruichips
 ruh1h138m-c.pdf pdf_icon

RUH1H138S

RUH1H138M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,RDS (ON) =3.6m(Typ.)@VGS=10VDRDS (ON) =4.5m(Typ.)@VGS=4.5VDD Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching SpeedG 100% Avalanche TestedSS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Syn

 7.1. Size:312K  ruichips
 ruh1h130s.pdf pdf_icon

RUH1H138S

RUH1H130SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,DRDS (ON) =5.8m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.2. Size:378K  ruichips
 ruh1h139r.pdf pdf_icon

RUH1H138S

RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp

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Datasheet: RUH120N35L , RUH120N35M3 , RUH120N70R , RUH120N81L , RUH120N90M , RUH120N90R , RUH1H130S , RUH1H138M-C , IRF640 , RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T .

History: 2SK1069 | 50N06L-TF3T-T | IRF5803D2

Keywords - RUH1H138S MOSFET datasheet

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