RUH1H138S - аналоги, параметры транзистора - Справочник транзисторов

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RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

6.1. Size:218K ruichips
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RUH1H138M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =3.6m (Typ.)@VGS=10V D RDS (ON) =4.5m (Typ.)@VGS=4.5V D D Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching Speed G 100% Avalanche Tested S S Lead Free and Green Devices (RoHS Compliant) S PIN1 DFN5060 D Applications Syn

7.1. Size:312K ruichips
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RUH1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, D RDS (ON) =5.8m (Typ.)@VGS=10V RDS (ON) =6.5m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

7.2. Size:378K ruichips
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RUH1H139R N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D App