RUH1H150R-A PDF and Equivalents Search

 

RUH1H150R-A Specs and Replacement

Type Designator: RUH1H150R-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 319 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 1850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

RUH1H150R-A substitution

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RUH1H150R-A datasheet

 ..1. Size:396K  ruichips
ruh1h150r-a.pdf pdf_icon

RUH1H150R-A

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D ... See More ⇒

 5.1. Size:1197K  ruichips
ruh1h150r.pdf pdf_icon

RUH1H150R-A

RUH1H150R N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.2m (Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Motor Drives Uninte... See More ⇒

 6.1. Size:311K  ruichips
ruh1h150s.pdf pdf_icon

RUH1H150R-A

RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, D RDS (ON) =3.2m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D... See More ⇒

 6.2. Size:265K  ruichips
ruh1h150t.pdf pdf_icon

RUH1H150R-A

RUH1H150T N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, 11 RDS (ON) =2.9m (Typ.)@VGS=10V 9 10 Using Ruichips Advanced RUISGTTM Technology 10 9 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 2 8 34 76 100% Avalanche Tested 56 54 Lead Fre... See More ⇒

Detailed specifications: RUH120N90R, RUH1H130S, RUH1H138M-C, RUH1H138S, RUH1H139R, RUH1H139R-A, RUH1H139S, RUH1H150M-C, IRFB4110, RUH1H150S, RUH1H150S-AR, RUH1H150T, RUH1H220R, RUH1H220S, RUH1H300T, RUH3025M3, RUH3030M3

Keywords - RUH1H150R-A MOSFET specs

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