RUH3025M3 PDF and Equivalents Search

 

RUH3025M3 Specs and Replacement

Type Designator: RUH3025M3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN3030

RUH3025M3 substitution

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RUH3025M3 datasheet

 ..1. Size:319K  ruichips
 ruh3025m3.pdf pdf_icon

RUH3025M3

RUH3025M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/25A, D RDS (ON) =10m (Typ.)@VGS=10V D D RDS (ON) =16m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S S ESD protected 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) D... See More ⇒

 9.1. Size:384K  ruichips
 ruh30150m.pdf pdf_icon

RUH3025M3

RUH30150M N-Channel Advanced Power MOSFET Features Pin Description 30V/150A, RDS (ON) =0.9m (Typ.)@VGS=10V D D D D RDS (ON) =1.4m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power ... See More ⇒

 9.2. Size:286K  ruichips
 ruh30j105m.pdf pdf_icon

RUH3025M3

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com... See More ⇒

 9.3. Size:286K  ruichips
 ruh30j85m.pdf pdf_icon

RUH3025M3

RUH30J85M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =3.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Complia... See More ⇒

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Detailed specifications: RUH1H150M-C, RUH1H150R-A, RUH1H150S, RUH1H150S-AR, RUH1H150T, RUH1H220R, RUH1H220S, RUH1H300T, AON6414A, RUH3030M3, RUH3051M, RUH3090M, RUH3090M3-C, RUH30J105M, RUH30J120M, RUH30J51M, RUH30J85M

Keywords - RUH3025M3 MOSFET specs

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