RUH3051M Datasheet and Replacement
Type Designator: RUH3051M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 50
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 230
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package: DFN5060
-
MOSFET ⓘ Cross-Reference Search
RUH3051M Datasheet (PDF)
..1. Size:457K ruichips
ruh3051m.pdf 
RUH3051MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =5m(Typ.)@VGS=10VDRDS (ON) =7.5m(Typ.)@VGS=4.5VDDD Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)SSPIN1DFN5060DApplications DC/DC Converters On board power for server
0.1. Size:414K ruichips
ruh3051m2.pdf
RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for
9.1. Size:384K ruichips
ruh30150m.pdf
RUH30150MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/150A,RDS (ON) =0.9m(Typ.)@VGS=10V DDDDRDS (ON) =1.4m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power
9.2. Size:286K ruichips
ruh30j105m.pdf
RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com
9.3. Size:286K ruichips
ruh30j85m.pdf
RUH30J85MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =3.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Complia
9.4. Size:286K ruichips
ruh30j95m.pdf
RUH30J95MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =2.8m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compl
9.5. Size:385K ruichips
ruh30120m-c.pdf
RUH30120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.6m(Typ.)@VGS=10V DDDDRDS (ON) =2.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board powe
9.6. Size:319K ruichips
ruh3025m3.pdf
RUH3025M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/25A,DRDS (ON) =10m(Typ.)@VGS=10VDDRDS (ON) =16m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D
9.7. Size:285K ruichips
ruh3090m.pdf
RUH3090MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DDRDS (ON) =2.6m(Typ.)@VGS=10VDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM TechnologyG Ultra Low On-ResistanceSS 100% Avalanche TestedS Reliable and Rugged Qualified According to JEDEC CriteriaPIN1 Lead Free and Green Devices (RoHS Compliant
9.8. Size:562K ruichips
ruh3030m3.pdf
RUH3030M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A,RDS (ON) =5m(Typ.)@VGS=10VDDRDS (ON) =8.5m(Typ.)@VGS=4.5VDD Ultra Low On-Resistance Uses Ruichips advanced RUISGTTM technology 100% avalanche testedSG Lead Free and Green Devices Available (RoHS Compliant) SSPIN1PIN1DFN3030DApplications DC/DC Converters
9.9. Size:716K ruichips
ruh30j120m.pdf
RUH30J120MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/50ARDS (ON) =3.8m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS
9.10. Size:684K ruichips
ruh30j51m.pdf
RUH30J51M Dual Symmetric N-Channel MOSFETFeatures Pin Description 30V/50A,S2S2RDS (ON) =5m(Typ.)@VGS=10VS2G2RDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching SpeedD1D1D1 100% avalanche tested 100% avalanche testedD1 Lead Free and Green Devices Available (RoHS Compliant)G1PIN1DFN5*6Applicationspp DC/DC Co
9.11. Size:708K ruichips
ruh3090m3-c.pdf
RUH3090M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.7m(Typ.)@VGS=10V DDDRDS (ON) =4m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green Devi
Datasheet: RUH1H150S
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, RUH30J51M
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, RUH30J95M
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