RUH30J120M PDF and Equivalents Search

 

RUH30J120M Specs and Replacement

Type Designator: RUH30J120M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 1860 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5060

RUH30J120M substitution

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RUH30J120M datasheet

 ..1. Size:716K  ruichips
 ruh30j120m.pdf pdf_icon

RUH30J120M

RUH30J120M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/50A RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS... See More ⇒

 7.1. Size:286K  ruichips
 ruh30j105m.pdf pdf_icon

RUH30J120M

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com... See More ⇒

 8.1. Size:286K  ruichips
 ruh30j85m.pdf pdf_icon

RUH30J120M

RUH30J85M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =3.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Complia... See More ⇒

 8.2. Size:286K  ruichips
 ruh30j95m.pdf pdf_icon

RUH30J120M

RUH30J95M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =2.8m (Typ.)@VGS=10V RDS (ON) =4.2m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compl... See More ⇒

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Detailed specifications: RUH1H220S, RUH1H300T, RUH3025M3, RUH3030M3, RUH3051M, RUH3090M, RUH3090M3-C, RUH30J105M, IRFP250N, RUH30J51M, RUH30J85M, RUH30J95M, RUH40190M, RUH4022M3, RUH4025M3, RUH40300T, RUH40330T

Keywords - RUH30J120M MOSFET specs

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