All MOSFET. RUH30J95M Datasheet

 

RUH30J95M Datasheet and Replacement


   Type Designator: RUH30J95M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN5060
      - MOSFET Cross-Reference Search

 

RUH30J95M Datasheet (PDF)

 ..1. Size:286K  ruichips
 ruh30j95m.pdf pdf_icon

RUH30J95M

RUH30J95MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =2.8m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compl

 8.1. Size:286K  ruichips
 ruh30j105m.pdf pdf_icon

RUH30J95M

RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com

 8.2. Size:286K  ruichips
 ruh30j85m.pdf pdf_icon

RUH30J95M

RUH30J85MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =3.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Complia

 8.3. Size:716K  ruichips
 ruh30j120m.pdf pdf_icon

RUH30J95M

RUH30J120MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/50ARDS (ON) =3.8m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - RUH30J95M MOSFET datasheet

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