All MOSFET. H0110D Datasheet

 

H0110D Datasheet and Replacement


   Type Designator: H0110D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: DPAK
 

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H0110D Datasheet (PDF)

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H0110D

H0110D/KN-Channel MOSFET10A,100V, N H H0110D DPAKNCE0110K HAOHAI 2500Pcs 2500PcsH0110K TO-252H0110D Series Pin AssignmentID=9.6ADESCRIPTIONVDS=100VThe H0110DH0110KRDS(on)=105muses advanced trench t

Datasheet: RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , RUQ4040M2 , 5N65 , H0110K , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P , H12N60P .

History: IXFK250N10P

Keywords - H0110D MOSFET datasheet

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