H0110D Specs and Replacement
Type Designator: H0110D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: DPAK
H0110D substitution
- MOSFET ⓘ Cross-Reference Search
H0110D datasheet
h0110d h0110k.pdf
H0110D/K N-Channel MOSFET 10A,100V, N H H0110D DPAK NCE0110K HAOHAI 2500Pcs 2500Pcs H0110K TO-252 H0110D Series Pin Assignment ID=9.6A DESCRIPTION VDS=100V The H0110D H0110K RDS(on)=105m uses advanced trench t... See More ⇒
Detailed specifications: RUH85100M-C, RUH85120M-C, RUH85120S, RUH85150R, RUH85210R, RUH85230S, RUH85350T, RUQ4040M2, CS150N03A8, H0110K, H01H14B, H01H14D, H01P13D, H01P13K, H10N60P, H10N65P, H12N60P
Keywords - H0110D MOSFET specs
H0110D cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOW298 | 2SK1399 | 2SK1288 | 2SK1198 | 2SK1289 | RV1C002UN | HM13N50
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