All MOSFET. H01H14B Datasheet

 

H01H14B Datasheet and Replacement


   Type Designator: H01H14B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 914 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: D2PAK
 

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H01H14B Datasheet (PDF)

 ..1. Size:406K  cn haohai electr
 h01h14b h01h14d.pdf pdf_icon

H01H14B

H01H14D/BN-Channel MOSFET140A,100V, N H TO-263H01H14BNCE01H14D HAOHAI 800Pcs 8000PcsH01H14DD2PAKH01H14B Series Pin AssignmentID=140ADESCRIPTIONVDS=100VThe H01H14BH01H14DRDS(on)=5.5muses advanced t

Datasheet: RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , RUQ4040M2 , H0110D , H0110K , IRFP250 , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P , H12N60P , H12N65P , H15N10U .

History: IRFB7746 | H01P13K | IRC533A | IRF840LC | ISL9N302AP3 | IRFB7446G

Keywords - H01H14B MOSFET datasheet

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