All MOSFET. H01H14B Datasheet

 

H01H14B MOSFET. Datasheet pdf. Equivalent


   Type Designator: H01H14B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 914 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: D2PAK

 H01H14B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H01H14B Datasheet (PDF)

 ..1. Size:406K  cn haohai electr
 h01h14b h01h14d.pdf

H01H14B H01H14B

H01H14D/BN-Channel MOSFET140A,100V, N H TO-263H01H14BNCE01H14D HAOHAI 800Pcs 8000PcsH01H14DD2PAKH01H14B Series Pin AssignmentID=140ADESCRIPTIONVDS=100VThe H01H14BH01H14DRDS(on)=5.5muses advanced t

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