H01H14B MOSFET. Datasheet pdf. Equivalent
Type Designator: H01H14B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 914 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: D2PAK
H01H14B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H01H14B Datasheet (PDF)
h01h14b h01h14d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
H01H14D/BN-Channel MOSFET140A,100V, N H TO-263H01H14BNCE01H14D HAOHAI 800Pcs 8000PcsH01H14DD2PAKH01H14B Series Pin AssignmentID=140ADESCRIPTIONVDS=100VThe H01H14BH01H14DRDS(on)=5.5muses advanced t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![H01H14B](https://alltransistors.com/images/us.png)
![H01H14B](https://alltransistors.com/images/es.png)
![H01H14B](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100