H01H14B PDF and Equivalents Search

 

H01H14B Specs and Replacement

Type Designator: H01H14B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 914 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: D2PAK

H01H14B substitution

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H01H14B datasheet

 ..1. Size:406K  cn haohai electr
 h01h14b h01h14d.pdf pdf_icon

H01H14B

H01H14D/B N-Channel MOSFET 140A,100V, N H TO-263 H01H14B NCE01H14D HAOHAI 800Pcs 8000Pcs H01H14D D2PAK H01H14B Series Pin Assignment ID=140A DESCRIPTION VDS=100V The H01H14B H01H14D RDS(on)=5.5m uses advanced t... See More ⇒

Detailed specifications: RUH85120S, RUH85150R, RUH85210R, RUH85230S, RUH85350T, RUQ4040M2, H0110D, H0110K, AON7506, H01H14D, H01P13D, H01P13K, H10N60P, H10N65P, H12N60P, H12N65P, H15N10U

Keywords - H01H14B MOSFET specs

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