All MOSFET. H2302A Datasheet

 

H2302A MOSFET. Datasheet pdf. Equivalent


   Type Designator: H2302A
   Marking Code: A2SHB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.75 nC
   trⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-23

 H2302A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H2302A Datasheet (PDF)

 ..1. Size:170K  cn haohai electr
 h2302a.pdf

H2302A H2302A

HAOHAI ELECTRONICS H2302A 4A, 20V, N-Channel MOSFETApplicationLoad Switch FeaturesPWM ApplicationRDS(ON)

 9.1. Size:88K  hsmc
 h2302n.pdf

H2302A H2302A

Spec. No. : MOS200613 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.12 MICROELECTRONICS CORP. Page No. : 1/4 H2302N Pin Assignment & Symbol H2302N 33-Lead Plastic SOT-23 N-Channel Enhancement-Mode MOSFET (20V, 2.4A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21DrainFeatures GateSource RDS(on)

 9.2. Size:482K  cn haohai electr
 h2302.pdf

H2302A H2302A

HAOHAI ELECTRONICS H2302 2A 20V N-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)60m @ VGS=4.5V FEATURERDS(ON)100m @ VGS=2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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