FQD5P20 MOSFET PDF: P-Ch, 200V, 3.7A. Datasheet. Full specification with pinout and replacement list

FQD5P20 Specs and Replacement

   Type Designator: FQD5P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252 DPAK

FQD5P20 substitution

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FQD5P20 datasheet

..1. Size:657K fairchild semi
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October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced techn... See More ⇒

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October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been espec... See More ⇒

Detailed specifications: FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , IRF9640 , FQD6N25 , FQD6N40C , HUFA76419DF085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B .