H4N65U PDF and Equivalents Search

 

H4N65U Specs and Replacement

Type Designator: H4N65U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251

H4N65U substitution

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H4N65U datasheet

 ..1. Size:331K  cn haohai electr
 h4n65u h4n65d.pdf pdf_icon

H4N65U

4N65 Series N-Channel MOSFET 4A, 650V, N H FQU4N65C H4N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N65 FQD4N65C H4N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N65 Series Pin Assignment 3-Lead Plastic TO-251 DESCRIPTION Package Code U The H4N65 is a high voltage power MOSFET designed to have better Pin 1 Gate characteristics, ... See More ⇒

 9.1. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf pdf_icon

H4N65U

LNC4N65 LND4N65 LNG4N65 LNH4N65 LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate... See More ⇒

Detailed specifications: H2N60U, H2N60D, H2N65U, H2N65D, H4N60P, H4N60F, H4N60U, H4N60D, AO3400A, H4N65D, H5N50U, H5N50D, H5N60P, H5N60F, H5N60U, H5N60D, H6N70P

Keywords - H4N65U MOSFET specs

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