All MOSFET. H4N65D Datasheet

 

H4N65D Datasheet and Replacement


   Type Designator: H4N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252
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H4N65D Datasheet (PDF)

 ..1. Size:331K  cn haohai electr
 h4n65u h4n65d.pdf pdf_icon

H4N65D

4N65 SeriesN-Channel MOSFET4A, 650V, N H FQU4N65C H4N65U U: TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI4N65FQD4N65C H4N65D D: TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N65 Series Pin Assignment3-Lead Plastic TO-251 DESCRIPTIONPackage Code: U The H4N65 is a high voltage power MOSFET designed to have betterPin 1: Gatecharacteristics,

 9.1. Size:1098K  lonten
 lnc4n65 lnd4n65 lng4n65 lnh4n65 lnf4n65.pdf pdf_icon

H4N65D

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: OSG80R140KF | LKK47-06C5 | TSM4424CS | APM4010NU | RFD3055SM | BRCS200P03DP | SLF13N50A

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