All MOSFET. H8N65P Datasheet

 

H8N65P Datasheet and Replacement


   Type Designator: H8N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220AB
 

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H8N65P Datasheet (PDF)

 ..1. Size:405K  cn haohai electr
 h8n65p h8n65f.pdf pdf_icon

H8N65P

8N65 SeriesN-Channel MOSFET7.5A, 650V, N H FQP8N65C H8N65P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs8N65FQPF8N65C H8N65F F: TO-220FP8N65 Series Pin AssignmentFeaturesID=7.5AOriginative New Design

Datasheet: H6N70P , H6N70F , H6N70U , H6N70D , H7N60P , H7N60F , H8N60P , H8N60F , AOD4184A , H8N65F , H90N71P , H90N71F , HIRFZ24NP , HIRFZ24NF , HIRFZ44N , HIRFZ44F , HLML6401 .

History: CS12N80F | AP180N04NF | SML20J175 | ELM36400EA | EM8810 | AP9950AGP

Keywords - H8N65P MOSFET datasheet

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