All MOSFET. H8N65P Datasheet

 

H8N65P MOSFET. Datasheet pdf. Equivalent


   Type Designator: H8N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220AB

 H8N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H8N65P Datasheet (PDF)

 ..1. Size:405K  cn haohai electr
 h8n65p h8n65f.pdf

H8N65P H8N65P

8N65 SeriesN-Channel MOSFET7.5A, 650V, N H FQP8N65C H8N65P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs8N65FQPF8N65C H8N65F F: TO-220FP8N65 Series Pin AssignmentFeaturesID=7.5AOriginative New Design

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PF608BA | WST3032 | FDC655AN | VBZA4412 | AM4963P

 

 
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