All MOSFET. HLML6401 Datasheet

 

HLML6401 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HLML6401
   Marking Code: 1F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 HLML6401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HLML6401 Datasheet (PDF)

 ..1. Size:281K  cn haohai electr
 hlml6401.pdf

HLML6401 HLML6401

HLML6401P-Channel MOSFETs-4.3A,-12VP P HLML6401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-12V, -4.3A, RDS(ON)=50m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableL

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