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HLML6401 Specs and Replacement

Type Designator: HLML6401

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT-23

HLML6401 substitution

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HLML6401 datasheet

 ..1. Size:281K  cn haohai electr
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HLML6401

HLML6401 P-Channel MOSFETs -4.3A,-12V P P HLML6401 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -12V, -4.3A, RDS(ON)=50m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable L... See More ⇒

Detailed specifications: H8N65P, H8N65F, H90N71P, H90N71F, HIRFZ24NP, HIRFZ24NF, HIRFZ44N, HIRFZ44F, IRF740, HMDN3010D, HNM2302, HNM2302ALB, HNM7002, HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA

Keywords - HLML6401 MOSFET specs

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