All MOSFET. HLML6401 Datasheet

 

HLML6401 Datasheet and Replacement


   Type Designator: HLML6401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23
 

 HLML6401 substitution

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HLML6401 Datasheet (PDF)

 ..1. Size:281K  cn haohai electr
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HLML6401

HLML6401P-Channel MOSFETs-4.3A,-12VP P HLML6401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-12V, -4.3A, RDS(ON)=50m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableL

Datasheet: H8N65P , H8N65F , H90N71P , H90N71F , HIRFZ24NP , HIRFZ24NF , HIRFZ44N , HIRFZ44F , IRF740 , HMDN3010D , HNM2302 , HNM2302ALB , HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA .

History: BRD4N70

Keywords - HLML6401 MOSFET datasheet

 HLML6401 cross reference
 HLML6401 equivalent finder
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