HMDN3010D Specs and Replacement
Type Designator: HMDN3010D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP-8
HMDN3010D substitution
- MOSFET ⓘ Cross-Reference Search
HMDN3010D datasheet
Detailed specifications: H8N65F, H90N71P, H90N71F, HIRFZ24NP, HIRFZ24NF, HIRFZ44N, HIRFZ44F, HLML6401, IRF840, HNM2302, HNM2302ALB, HNM7002, HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA
Keywords - HMDN3010D MOSFET specs
HMDN3010D cross reference
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HMDN3010D substitution
HMDN3010D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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