All MOSFET. HPD045N03CTA Datasheet

 

HPD045N03CTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPD045N03CTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 81 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-252

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HPD045N03CTA Datasheet (PDF)

 ..1. Size:523K  cn haohai electr
 hpd045n03cta hpp045n03cta.pdf

HPD045N03CTA HPD045N03CTA

HPD045N03CTA (TO-252)HAOHAI ELECTRONICSHPP045N03CTA (TO-220)Product Summary90A, 30VVDSV30N-CHANNEL POWER MOSFETRDS(ON) Max.4.5 mFeaturesAdvanced process technologyID90 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeDD1.GateDGSGTO-252DS TO-220DPAK3.SourceOR

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