All MOSFET. HPD045N03CTA Datasheet

 

HPD045N03CTA Datasheet and Replacement


   Type Designator: HPD045N03CTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 81 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-252
 

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HPD045N03CTA Datasheet (PDF)

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HPD045N03CTA

HPD045N03CTA (TO-252)HAOHAI ELECTRONICSHPP045N03CTA (TO-220)Product Summary90A, 30VVDSV30N-CHANNEL POWER MOSFETRDS(ON) Max.4.5 mFeaturesAdvanced process technologyID90 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeDD1.GateDGSGTO-252DS TO-220DPAK3.SourceOR

Datasheet: HNM2302 , HNM2302ALB , HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , IRFP260N , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 .

History: AMCC530C | APT10035B2LL | STD30NF03L | XGP6510B | MMBF4091 | SI2323DDS-T1-GE3 | UTT150N03

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