HPD4006CTA Datasheet and Replacement
Type Designator: HPD4006CTA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-220
HPD4006CTA substitution
HPD4006CTA Datasheet (PDF)
hpd4006cta hpb400n06cta hpp400n06cta.pdf
HPD4006CTATO-252HPB400N06CTATO-263HAOHAI ELECTRONICSHPP400N06CTATO-220Product Summary27A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.40 mFeaturesAdvanced process technologyID27 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free221.Gate1 1123 33TO-2
hpd4004sta.pdf
HPD4004STA40V, 120AProduct SummaryN-channel Enhancement Mode Power MOSFETVDSRDS(ON)
Datasheet: HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , IRF3710 , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 .
History: 7N80G-TQ2-R
Keywords - HPD4006CTA MOSFET datasheet
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History: 7N80G-TQ2-R
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