FQD7N10L MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD7N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.8 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO252, DPAK
FQD7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD7N10L Datasheet (PDF)
1.1. fqd7n10l fqu7n10l.pdf 
Size:625K _fairchild_semi
October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especially tailored t
1.2. fqd7n10ltf fqd7n10ltm.pdf Size:625K _fairchild_semi
October 2008 QFET® FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology is especia
3.1. fqd7n10tm.pdf Size:589K _fairchild_semi
October 2008 QFET® FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is especially tail
Datasheet: FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , IRF8010 , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 .
