FQD7N10L MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD7N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.8 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: TO252, DPAK
FQD7N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD7N10L Datasheet (PDF)
0.1. fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf 
Size:625K _fairchild_semi
October 2008 QFET® FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology is especia
7.1. fqd7n10tm.pdf Size:589K _fairchild_semi
October 2008 QFET® FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology is especially tail
9.1. fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf Size:581K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQD7N30 / FQU7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.5A, 300V, RDS(on) = 0.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology h
9.2. fqd7n20l fqu7n20l.pdf Size:569K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced
9.3. fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi
October 2008 QFET® FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especia
9.4. fqd7n20ltf fqd7n20ltm.pdf Size:622K _fairchild_semi
October 2008 QFET® FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology is especi
Datasheet: FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , IRF8010 , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 .
