Справочник MOSFET. FQD7N10L

 

FQD7N10L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD7N10L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 5.8 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.35 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD7N10L

 

 

FQD7N10L Datasheet (PDF)

1.1. fqd7n10l fqu7n10l.pdf Size:625K _fairchild_semi

FQD7N10L
FQD7N10L

October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especially tailored t

5.1. fqd7n20l fqu7n20l.pdf Size:569K _fairchild_semi

FQD7N10L
FQD7N10L

December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced

5.2. fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi

FQD7N10L
FQD7N10L

October 2008 QFET FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored t

 5.3. fqd7n30 fqu7n30.pdf Size:581K _fairchild_semi

FQD7N10L
FQD7N10L

April 2000 TM QFET QFET QFET QFET FQD7N30 / FQU7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been espec

Другие MOSFET... FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , IRF8010 , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 .

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Список транзисторов

Обновления

MOSFET: IRFR13N20DPBF | IRFR13N15DPBF | IRFR130ATM | IRFR12N25DPBF | IRFR120ZPBF | IRFR120PBF | IRFR120NPBF | IRFR120ATM | IRFR1205PBF | IRFR110PBF | IRFR1018EPBF | IRFR1010ZPBF | IRFR024PBF | IRFR024NPBF | IRFR020PBF |