HPM3401 PDF and Equivalents Search

 

HPM3401 Specs and Replacement

Type Designator: HPM3401

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT-23

HPM3401 substitution

- MOSFET ⓘ Cross-Reference Search

 

HPM3401 datasheet

 ..1. Size:283K  cn haohai electr
 hpm3401.pdf pdf_icon

HPM3401

HPM3401 P-Channel MOSFETs -3.8A,-30V P P HPM3401 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -3.8A, RDS(ON)=50m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead f... See More ⇒

 0.1. Size:282K  cn haohai electr
 hpm3401a.pdf pdf_icon

HPM3401

HPM3401A P-Channel MOSFETs -4.2A,-30V P P HPM3401A P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -4.2A, RDS(ON)=53m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Le... See More ⇒

 9.1. Size:282K  cn haohai electr
 hpm3415.pdf pdf_icon

HPM3401

HPM3415 P-Channel MOSFETs -4.0A,-30V P P HPM3415 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -20V, -4.0A, RDS(ON)=35m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lea... See More ⇒

Detailed specifications: HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , P55NF06 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA , HQB7N65C .

Keywords - HPM3401 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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