All MOSFET. HPM3415 Datasheet

 

HPM3415 Datasheet and Replacement


   Type Designator: HPM3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: SOT-23
 

 HPM3415 substitution

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HPM3415 Datasheet (PDF)

 ..1. Size:282K  cn haohai electr
 hpm3415.pdf pdf_icon

HPM3415

HPM3415P-Channel MOSFETs-4.0A,-30VP P HPM3415P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -4.0A, RDS(ON)=35m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

 9.1. Size:283K  cn haohai electr
 hpm3401.pdf pdf_icon

HPM3415

HPM3401P-Channel MOSFETs-3.8A,-30VP PHPM3401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -3.8A, RDS(ON)=50m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLead f

 9.2. Size:282K  cn haohai electr
 hpm3401a.pdf pdf_icon

HPM3415

HPM3401AP-Channel MOSFETs-4.2A,-30VPP HPM3401AP-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -4.2A, RDS(ON)=53m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLe

Datasheet: HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , HPM3401 , HPM3401A , AON7408 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N .

History: RJK6024DPE

Keywords - HPM3415 MOSFET datasheet

 HPM3415 cross reference
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