HPM3415 Datasheet. Specs and Replacement

Type Designator: HPM3415  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: SOT-23

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HPM3415 datasheet

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HPM3415

HPM3415 P-Channel MOSFETs -4.0A,-30V P P HPM3415 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -20V, -4.0A, RDS(ON)=35m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lea... See More ⇒

 9.1. Size:283K  cn haohai electr
 hpm3401.pdf pdf_icon

HPM3415

HPM3401 P-Channel MOSFETs -3.8A,-30V P P HPM3401 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -3.8A, RDS(ON)=50m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead f... See More ⇒

 9.2. Size:282K  cn haohai electr
 hpm3401a.pdf pdf_icon

HPM3415

HPM3401A P-Channel MOSFETs -4.2A,-30V P P HPM3401A P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -30V, -4.2A, RDS(ON)=53m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Le... See More ⇒

Detailed specifications: HPD4006CTA, HPB400N06CTA, HPP400N06CTA, HPM2301, HPM2305, HPM2623, HPM3401, HPM3401A, 7N65, HPMB84A, HPP080NE5SPA, HPP120N08STA, HPW080NE5SPA, HPW750N20SPA, HQB7N65C, HQF7N65C, IRFD24N

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