IRFD24N PDF Specs and Replacement
Type Designator: IRFD24N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id| ⓘ - Maximum Drain Current: 20
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 180
nS
Cossⓘ -
Output Capacitance: 430
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
DPAK
-
MOSFET ⓘ Cross-Reference Search
IRFD24N PDF Specs
9.3. Size:927K international rectifier
irfd224pbf.pdf 
PD- 95923 IRFD224PbF Lead-Free 10/29/04 Document Number 91132 www.vishay.com 1 IRFD224PbF Document Number 91132 www.vishay.com 2 IRFD224PbF Document Number 91132 www.vishay.com 3 IRFD224PbF Document Number 91132 www.vishay.com 4 IRFD224PbF Document Number 91132 www.vishay.com 5 IRFD224PbF Document Number 91132 www.vishay.com 6 IRFD224PbF Document Number 91... See More ⇒
9.4. Size:308K international rectifier
irfd224.pdf
PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 1.1 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒
9.5. Size:314K international rectifier
irfd214.pdf
PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 2.0 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒
9.6. Size:1702K vishay
irfd210 sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
9.7. Size:1260K vishay
irfd214 sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
9.8. Size:1238K vishay
irfd224 sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co... See More ⇒
9.9. Size:1237K vishay
irfd224pbf sihfd224.pdf
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co... See More ⇒
9.10. Size:1261K vishay
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
9.11. Size:1890K vishay
irfd220 sihfd220.pdf
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
9.12. Size:1704K vishay
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
9.13. Size:1891K vishay
irfd220pbf sihfd220.pdf
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
Detailed specifications: HPM3415
, HPMB84A
, HPP080NE5SPA
, HPP120N08STA
, HPW080NE5SPA
, HPW750N20SPA
, HQB7N65C
, HQF7N65C
, IRF9540N
, NCE01ND03S
, NCE020N30K
, NCE025N30G
, NCE025N30K
, NCE035N30G
, NCE035N30K
, NCE042N30K
, NCE048N30Q
.
Keywords - IRFD24N MOSFET specs
IRFD24N cross reference
IRFD24N equivalent finder
IRFD24N pdf lookup
IRFD24N substitution
IRFD24N replacement
Need a MOSFET replacement?
Our guide shows you how to find a perfect substitute by comparing key parameters and specs
