IRFD24N
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFD24N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 180
nS
Cossⓘ -
Output Capacitance: 430
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
DPAK
IRFD24N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFD24N
Datasheet (PDF)
..1. Size:455K cn haohai electr
irfd24n.pdf
IRFD24NN-Channel MOSFET20A, 55V, N H D 2 52500PcsIRFR24N IRFD24N HAOHAI DPAK 5000Pcs 25000Pcs2.5KpcsTO-252 ( 5Kpcs ) ( 25Kpcs )IRFD24N Series Pin AssignmentID=20A
9.3. Size:927K international rectifier
irfd224pbf.pdf
PD- 95923IRFD224PbF Lead-Free10/29/04Document Number: 91132 www.vishay.com1IRFD224PbFDocument Number: 91132 www.vishay.com2IRFD224PbFDocument Number: 91132 www.vishay.com3IRFD224PbFDocument Number: 91132 www.vishay.com4IRFD224PbFDocument Number: 91132 www.vishay.com5IRFD224PbFDocument Number: 91132 www.vishay.com6IRFD224PbFDocument Number: 91
9.4. Size:308K international rectifier
irfd224.pdf
PD -9.1272IRFD224HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 1.1Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.63ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
9.5. Size:314K international rectifier
irfd214.pdf
PD -9.1271IRFD214HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 2.0Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.45ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
9.6. Size:1702K vishay
irfd210 sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
9.7. Size:1260K vishay
irfd214 sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
9.8. Size:1238K vishay
irfd224 sihfd224.pdf
IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co
9.9. Size:1237K vishay
irfd224pbf sihfd224.pdf
IRFD224, SiHFD224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 RoHS For Automatic InsertionCOMPLIANT Qg (Max.) (nC) 14 End StackableQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Co
9.10. Size:1261K vishay
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
9.11. Size:1890K vishay
irfd220 sihfd220.pdf
IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen
9.12. Size:1704K vishay
irfd210pbf sihfd210.pdf
IRFD210, SiHFD210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* For Automatic InsertionQg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
9.13. Size:1891K vishay
irfd220pbf sihfd220.pdf
IRFD220, SiHFD220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* For Automatic InsertionQg (Max.) (nC) 14COMPLIANT End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 7.9 Ease of ParallelingConfiguration Single Simple Drive Requiremen
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.