IRFD24N. Аналоги и основные параметры
Наименование производителя: IRFD24N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 180 ns
Cossⓘ - Выходная емкость: 430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: DPAK
Аналог (замена) для IRFD24N
- подборⓘ MOSFET транзистора по параметрам
IRFD24N даташит
9.3. Size:927K international rectifier
irfd224pbf.pdf 
PD- 95923 IRFD224PbF Lead-Free 10/29/04 Document Number 91132 www.vishay.com 1 IRFD224PbF Document Number 91132 www.vishay.com 2 IRFD224PbF Document Number 91132 www.vishay.com 3 IRFD224PbF Document Number 91132 www.vishay.com 4 IRFD224PbF Document Number 91132 www.vishay.com 5 IRFD224PbF Document Number 91132 www.vishay.com 6 IRFD224PbF Document Number 91
9.4. Size:308K international rectifier
irfd224.pdf 
PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 1.1 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi
9.5. Size:314K international rectifier
irfd214.pdf 
PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 2.0 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi
9.6. Size:1702K vishay
irfd210 sihfd210.pdf 
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.7. Size:1260K vishay
irfd214 sihfd214.pdf 
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.8. Size:1238K vishay
irfd224 sihfd224.pdf 
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
9.9. Size:1237K vishay
irfd224pbf sihfd224.pdf 
IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS For Automatic Insertion COMPLIANT Qg (Max.) (nC) 14 End Stackable Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Configuration Single Simple Drive Requirements D Co
9.10. Size:1261K vishay
irfd214pbf sihfd214.pdf 
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.11. Size:1890K vishay
irfd220 sihfd220.pdf 
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.12. Size:1704K vishay
irfd210pbf sihfd210.pdf 
IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen
9.13. Size:1891K vishay
irfd220pbf sihfd220.pdf 
IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* For Automatic Insertion Qg (Max.) (nC) 14 COMPLIANT End Stackable Qgs (nC) 3.0 Fast Switching Qgd (nC) 7.9 Ease of Paralleling Configuration Single Simple Drive Requiremen
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