NCE025N30G MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE025N30G
Marking Code: 025N30G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 115 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 71 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 445 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DFN5X6-8L
NCE025N30G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE025N30G Datasheet (PDF)
nce025n30g.pdf
NCE025N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS
nce025n30k.pdf
NCE025N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS
nce0250d.pdf
Pb Free Producthttp://www.ncepower.com NCE0250DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0250D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
nce0224f.pdf
http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0240f.pdf
Pb Free Producthttp://www.ncepower.com NCE0240FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
nce0205ia.pdf
http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)
nce0224af.pdf
Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce02p20k.pdf
http://www.ncepower.comNCE02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-200V,I =-20A Schematic diagramDS DR
nce0224.pdf
NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)
nce0260.pdf
Pb Free Producthttp://www.ncepower.com NCE0260NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0275t.pdf
Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)
nce0224d.pdf
Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0202za.pdf
Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
nce0208ia.pdf
Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
nce0208ka.pdf
Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
nce0260p.pdf
Pb Free Producthttp://www.ncepower.com NCE0260PNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0202m.pdf
http://www.ncepower.com NCE0202MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS = 200V,ID =2A SRDS(ON)
nce0203s.pdf
Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)
nce020n30k.pdf
Pb Free Producthttp://www.ncepower.comNCE020N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE020N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =180ADS DR =1.9 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =2.6 m @ V =4.5V
nce0224a.pdf
Pb Free ProductNCE0224Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224da.pdf
Pb Free Producthttp://www.ncepower.com NCE0224DANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224k.pdf
Pb Free Producthttp://www.ncepower.com NCE0224KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0275d.pdf
http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR
nce0224ak.pdf
Pb Free ProductNCE0224AKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0240.pdf
Pb Free Producthttp://www.ncepower.com NCE0240NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
nce0260t.pdf
Pb Free Producthttp://www.ncepower.com NCE0260TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0275.pdf
http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR
nce0270t.pdf
http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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