NCE025N30G. Аналоги и основные параметры
Наименование производителя: NCE025N30G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 115 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 445 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCE025N30G
- подборⓘ MOSFET транзистора по параметрам
NCE025N30G даташит
8.1. Size:324K ncepower
nce0250d.pdf 
Pb Free Product http //www.ncepower.com NCE0250D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0250D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
9.1. Size:326K ncepower
nce0224f.pdf 
http //www.ncepower.com NCE0224F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.2. Size:352K ncepower
nce0240f.pdf 
Pb Free Product http //www.ncepower.com NCE0240F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
9.3. Size:305K ncepower
nce0205ia.pdf 
http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)
9.4. Size:314K ncepower
nce0224af.pdf 
Pb Free Product NCE0224AF http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.6. Size:319K ncepower
nce0224.pdf 
NCE0224 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)
9.7. Size:321K ncepower
nce0260.pdf 
Pb Free Product http //www.ncepower.com NCE0260 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.8. Size:332K ncepower
nce0275t.pdf 
Pb Free Product http //www.ncepower.com NCE0275T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)
9.9. Size:344K ncepower
nce0224d.pdf 
Pb Free Product http //www.ncepower.com NCE0224D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.10. Size:287K ncepower
nce0202za.pdf 
Pb Free Product http //www.ncepower.com NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0202ZA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
9.11. Size:322K ncepower
nce0208ia.pdf 
Pb Free Product http //www.ncepower.com NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
9.12. Size:433K ncepower
nce0208ka.pdf 
Pb Free Product http //www.ncepower.com NCE0208KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
9.13. Size:327K ncepower
nce0260p.pdf 
Pb Free Product http //www.ncepower.com NCE0260P NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.14. Size:283K ncepower
nce0202m.pdf 
http //www.ncepower.com NCE0202M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS = 200V,ID =2A S RDS(ON)
9.15. Size:324K ncepower
nce0203s.pdf 
Pb Free Product http //www.ncepower.com NCE0203S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)
9.16. Size:707K ncepower
nce020n30k.pdf 
Pb Free Product http //www.ncepower.com NCE020N30K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE020N30K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =180A DS D R =1.9 m @ V =10V (Typ) Schematic diagram DS(ON) GS R =2.6 m @ V =4.5V
9.17. Size:338K ncepower
nce0224a.pdf 
Pb Free Product NCE0224A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.18. Size:342K ncepower
nce0224da.pdf 
Pb Free Product http //www.ncepower.com NCE0224DA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.19. Size:396K ncepower
nce0224k.pdf 
Pb Free Product http //www.ncepower.com NCE0224K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.20. Size:657K ncepower
nce0275d.pdf 
http //www.ncepower.com NCE0275D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275D uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in automotive applications and a wide variety of other applications. General Features V =200V,I =75A Schematic diagram DSS D R
9.21. Size:389K ncepower
nce0224ak.pdf 
Pb Free Product NCE0224AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
9.22. Size:355K ncepower
nce0240.pdf 
Pb Free Product http //www.ncepower.com NCE0240 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
9.23. Size:313K ncepower
nce0260t.pdf 
Pb Free Product http //www.ncepower.com NCE0260T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.24. Size:653K ncepower
nce0275.pdf 
http //www.ncepower.com NCE0275 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in DS(ON) automotive applications and a wide variety of other applications. General Features V =200V,I =75A Schematic diagram DSS D R
9.25. Size:735K ncepower
nce0270t.pdf 
http //www.ncepower.com NCE0270T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0270T uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =200V,I =70A DS D R
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