NCE2007NS MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

NCE2007NS Specs and Replacement

Type Designator: NCE2007NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT23-6L

NCE2007NS substitution

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NCE2007NS datasheet

..1. Size:322K ncepower
nce2007ns.pdf pdf_icon

http //www.ncepower.com NCE2007NS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A... See More ⇒

6.1. Size:344K ncepower
nce2007n.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge... See More ⇒

8.1. Size:346K ncepower
nce2008e.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

8.2. Size:352K ncepower
nce2003.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2003 N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = ... See More ⇒