NCE2007NS - описание и поиск аналогов

http //www.ncepower.com NCE2007NS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A

Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge

Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

Pb Free Product http //www.ncepower.com NCE2003 N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

http //www.ncepower.com NCE2006Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)

NCE2006NE http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D

NCE2004Y http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =4A RDS(ON)