All MOSFET. NCE20ND07U Datasheet

 

NCE20ND07U Datasheet and Replacement


   Type Designator: NCE20ND07U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 183.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X3-6L
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NCE20ND07U Datasheet (PDF)

 ..1. Size:754K  ncepower
nce20nd07u.pdf pdf_icon

NCE20ND07U

http://www.ncepower.comNCE20ND07UNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 20V,I =7ADS DThe NCE20ND07U uses advanced trench technology and designR

 6.1. Size:322K  ncepower
nce20nd06.pdf pdf_icon

NCE20ND07U

Pb Free Producthttp://www.ncepower.com NCE20ND06NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 6.2. Size:640K  ncepower
nce20nd08u.pdf pdf_icon

NCE20ND07U

NCE20ND08Uhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND08U uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =20V,I =12ADS DR

 7.1. Size:650K  ncepower
nce20nd15q.pdf pdf_icon

NCE20ND07U

NCE20ND15Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND15Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.It is ESDprotected.General Features V =20V,I =15ADS DR = 3.6m @ V =4.5VDS(ON) GSSchematic diagramR = 3.7m @ V =4VDS

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History: CS5N65U

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