NCE20ND07U - описание и поиск аналогов

 

NCE20ND07U. Аналоги и основные параметры

Наименование производителя: NCE20ND07U

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 183.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm

Тип корпуса: DFN2X3-6L

Аналог (замена) для NCE20ND07U

- подборⓘ MOSFET транзистора по параметрам

 

NCE20ND07U даташит

 ..1. Size:754K  ncepower
nce20nd07u.pdfpdf_icon

NCE20ND07U

http //www.ncepower.com NCE20ND07U NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 20V,I =7A DS D The NCE20ND07U uses advanced trench technology and design R

 6.1. Size:322K  ncepower
nce20nd06.pdfpdf_icon

NCE20ND07U

Pb Free Product http //www.ncepower.com NCE20ND06 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 6.2. Size:640K  ncepower
nce20nd08u.pdfpdf_icon

NCE20ND07U

NCE20ND08U http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND08U uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =20V,I =12A DS D R

 7.1. Size:650K  ncepower
nce20nd15q.pdfpdf_icon

NCE20ND07U

NCE20ND15Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND15Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications.It is ESD protected. General Features V =20V,I =15A DS D R = 3.6m @ V =4.5V DS(ON) GS Schematic diagram R = 3.7m @ V =4V DS

Другие MOSFET... NCE1230SP , NCE18ND11U , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCEP15T14 , NCE20ND08U , NCE20ND15Q , NCE20PD05 , NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS .

 

 

 

 

↑ Back to Top
.