Справочник MOSFET. NCE20ND07U

 

NCE20ND07U Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE20ND07U
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 183.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: DFN2X3-6L
     - подбор MOSFET транзистора по параметрам

 

NCE20ND07U Datasheet (PDF)

 ..1. Size:754K  ncepower
nce20nd07u.pdfpdf_icon

NCE20ND07U

http://www.ncepower.comNCE20ND07UNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 20V,I =7ADS DThe NCE20ND07U uses advanced trench technology and designR

 6.1. Size:322K  ncepower
nce20nd06.pdfpdf_icon

NCE20ND07U

Pb Free Producthttp://www.ncepower.com NCE20ND06NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 6.2. Size:640K  ncepower
nce20nd08u.pdfpdf_icon

NCE20ND07U

NCE20ND08Uhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND08U uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =20V,I =12ADS DR

 7.1. Size:650K  ncepower
nce20nd15q.pdfpdf_icon

NCE20ND07U

NCE20ND15Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND15Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.It is ESDprotected.General Features V =20V,I =15ADS DR = 3.6m @ V =4.5VDS(ON) GSSchematic diagramR = 3.7m @ V =4VDS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQP1N50 | NCEP065N10GU

 

 
Back to Top

 


 
.