NCE65N680I MOSFET Datasheet: N-Ch, 650V, 6.7A. Full specification with pinout and replacement list

NCE65N680I Specs and Replacement

Type Designator: NCE65N680I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO-251

NCE65N680I substitution

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NCE65N680I datasheet

..1. Size:621K ncepower
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NCE65N680I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust... See More ⇒

5.1. Size:693K ncepower
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NCE65N680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust... See More ⇒

5.2. Size:675K ncepower
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NCE65N680R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust... See More ⇒

5.3. Size:640K ncepower
nce65n680d.pdf pdf_icon

NCE65N680D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust... See More ⇒