All MOSFET. NCE65N680I Datasheet

 

NCE65N680I Datasheet and Replacement


   Type Designator: NCE65N680I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 81 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO-251
      - MOSFET Cross-Reference Search

 

NCE65N680I Datasheet (PDF)

 ..1. Size:621K  ncepower
nce65n680i.pdf pdf_icon

NCE65N680I

NCE65N680IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.1. Size:693K  ncepower
nce65n680f.pdf pdf_icon

NCE65N680I

NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.2. Size:675K  ncepower
nce65n680r.pdf pdf_icon

NCE65N680I

NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.3. Size:640K  ncepower
nce65n680d.pdf pdf_icon

NCE65N680I

NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N70KL-TF2-T | 2SK1495-Z | BSC066N06NS | CSD17510Q5A | MMBT7002 | IRF5803D2 | RUH1H138S

Keywords - NCE65N680I MOSFET datasheet

 NCE65N680I cross reference
 NCE65N680I equivalent finder
 NCE65N680I lookup
 NCE65N680I substitution
 NCE65N680I replacement

 

 
Back to Top

 


 
.