NCE65N680I - аналоги и даташиты транзистора

 

NCE65N680I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE65N680I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 81 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6.7 ns
   Cossⓘ - Выходная емкость: 15 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для NCE65N680I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65N680I Datasheet (PDF)

 ..1. Size:621K  ncepower
 nce65n680i.pdf pdf_icon

NCE65N680I

NCE65N680IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.1. Size:693K  ncepower
 nce65n680f.pdf pdf_icon

NCE65N680I

NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.2. Size:675K  ncepower
 nce65n680r.pdf pdf_icon

NCE65N680I

NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.3. Size:640K  ncepower
 nce65n680d.pdf pdf_icon

NCE65N680I

NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60NF420D , NCE60NF420F , NCE60NF420I , NCE60NF420K , NCE60P14K , NCE60P82AF , NCE65N680D , NCE65N680F , HY1906P , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , NCE65NF130LL , NCE65NF130T , NCE65NF130V .

History: RU2HE2D

 

 
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