NCE65NF130D Datasheet. Specs and Replacement

Type Designator: NCE65NF130D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 237 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-263

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NCE65NF130D datasheet

 ..1. Size:675K  ncepower
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NCE65NF130D

NCE65NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒

 4.1. Size:652K  ncepower
nce65nf130ll.pdf pdf_icon

NCE65NF130D

NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, ... See More ⇒

 4.2. Size:692K  ncepower
nce65nf130f.pdf pdf_icon

NCE65NF130D

NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒

 4.3. Size:686K  ncepower
nce65nf130.pdf pdf_icon

NCE65NF130D

NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC... See More ⇒

Detailed specifications: NCE60P14K, NCE60P82AF, NCE65N680D, NCE65N680F, NCE65N680I, NCE65N680K, NCE65N680R, NCE65NF130, IRFB3206, NCE65NF130F, NCE65NF130LL, NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, NCE8205B, NCE8205T

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