NCE65NF130D MOSFET Datasheet: N-Ch, 650V, 26A. Full specification with pinout and replacement list

NCE65NF130D Specs and Replacement

   Type Designator: NCE65NF130D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 237 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-263

NCE65NF130D substitution

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NCE65NF130D datasheet

..1. Size:675K ncepower
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NCE65NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒

4.1. Size:652K ncepower
nce65nf130ll.pdf pdf_icon

NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, ... See More ⇒

4.2. Size:692K ncepower
nce65nf130f.pdf pdf_icon

NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒

4.3. Size:686K ncepower
nce65nf130.pdf pdf_icon

NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC... See More ⇒