NCE65NF130D datasheet, аналоги, основные параметры

Наименование производителя: NCE65NF130D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 237 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 95 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm

Тип корпуса: TO-263

  📄📄 Копировать 

Аналог (замена) для NCE65NF130D

- подборⓘ MOSFET транзистора по параметрам

 

NCE65NF130D даташит

 ..1. Size:675K  ncepower
 nce65nf130d.pdf pdf_icon

NCE65NF130D

NCE65NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A

 4.1. Size:652K  ncepower
 nce65nf130ll.pdf pdf_icon

NCE65NF130D

NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC,

 4.2. Size:692K  ncepower
 nce65nf130f.pdf pdf_icon

NCE65NF130D

NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A

 4.3. Size:686K  ncepower
 nce65nf130.pdf pdf_icon

NCE65NF130D

NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE60P14K, NCE60P82AF, NCE65N680D, NCE65N680F, NCE65N680I, NCE65N680K, NCE65N680R, NCE65NF130, IRFB3206, NCE65NF130F, NCE65NF130LL, NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, NCE8205B, NCE8205T