NCE8601B MOSFET Datasheet: N-Ch, 30V, 8A. Full specification with pinout and replacement list

NCE8601B Specs and Replacement

Type Designator: NCE8601B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TSSOP-8

NCE8601B substitution

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NCE8601B datasheet

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Pb Free Product http //www.ncepower.com NCE8601B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protested. General Features Schematic diagram ... See More ⇒

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nce8651q.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE65NF130F, NCE65NF130LL, NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, NCE8205B, NCE8205T, IRF740, NCE8651Q, NCEA2309, NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL