All MOSFET. NCE8601B Datasheet

 

NCE8601B Datasheet and Replacement


   Type Designator: NCE8601B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TSSOP-8
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NCE8601B Datasheet (PDF)

 ..1. Size:351K  ncepower
 nce8601b.pdf pdf_icon

NCE8601B

Pb Free Producthttp://www.ncepower.com NCE8601BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protested. General Features Schematic diagram

 9.1. Size:349K  ncepower
 nce8651q.pdf pdf_icon

NCE8601B

Pb Free Producthttp://www.ncepower.com NCE8651QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON)

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History: BSZ035N03LSG | SVF9N90F

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