NCE8651Q Specs and Replacement
Type Designator: NCE8651Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1000 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: DFN3X3
NCE8651Q substitution
- MOSFET ⓘ Cross-Reference Search
NCE8651Q datasheet
nce8651q.pdf
Pb Free Product http //www.ncepower.com NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON) ... See More ⇒
nce8601b.pdf
Pb Free Product http //www.ncepower.com NCE8601B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protested. General Features Schematic diagram ... See More ⇒
Detailed specifications: NCE65NF130LL, NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, NCE8205B, NCE8205T, NCE8601B, IRF840, NCEA2309, NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL
Keywords - NCE8651Q MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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