All MOSFET. NCE8651Q Datasheet

 

NCE8651Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE8651Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1000 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: DFN3X3

 NCE8651Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE8651Q Datasheet (PDF)

 ..1. Size:349K  ncepower
 nce8651q.pdf

NCE8651Q NCE8651Q

Pb Free Producthttp://www.ncepower.com NCE8651QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON)

 9.1. Size:351K  ncepower
 nce8601b.pdf

NCE8651Q NCE8651Q

Pb Free Producthttp://www.ncepower.com NCE8601BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protested. General Features Schematic diagram

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