All MOSFET. NCES075R026T Datasheet

 

NCES075R026T MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCES075R026T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 151 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-247

 NCES075R026T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCES075R026T Datasheet (PDF)

 ..1. Size:791K  ncepower
 nces075r026t.pdf

NCES075R026T NCES075R026T

PbFree ProductNCES075R026T750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time.Features Low on-resistance Fast switching speed Fast reverse recovery

 0.1. Size:801K  ncepower
 nces075r026t4.pdf

NCES075R026T NCES075R026T

PbFree ProductNCES075R026T4750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high-

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top