NCES075R026T Datasheet. Specs and Replacement

Type Designator: NCES075R026T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 151 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO-247

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NCES075R026T datasheet

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NCES075R026T

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NCES075R026T

PbFree Product NCES075R026T4 750V, 56A, N-channel SiC power MOSFET General Description NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-... See More ⇒

Detailed specifications: NCEP018NH30QU, NCEP023NH85AGU, NCEP023NH85GU, NCEP1580F, NCEP40ND80G, NCEP40T14A, NCEP60ND30AG, NCEP60ND60G, IRF630, NCES075R026T4, NCES120P035T4, NCES120P075T4, NCES120R018T4, BL10N40-A, BL10N40-D, BL10N40-P, BL10N40-U

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