NCES075R026T MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES075R026T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 151 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-247
NCES075R026T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES075R026T Datasheet (PDF)
nces075r026t.pdf
PbFree ProductNCES075R026T750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time.Features Low on-resistance Fast switching speed Fast reverse recovery
nces075r026t4.pdf
PbFree ProductNCES075R026T4750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high-
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