NCES120P035T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES120P035T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 112 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: TO-247-4L
NCES120P035T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES120P035T4 Datasheet (PDF)
nces120p035t4.pdf
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