All MOSFET. NCES120P035T4 Datasheet

 

NCES120P035T4 Datasheet and Replacement


   Type Designator: NCES120P035T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO-247-4L
 

 NCES120P035T4 substitution

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NCES120P035T4 Datasheet (PDF)

 ..1. Size:800K  ncepower
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NCES120P035T4

PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.1. Size:821K  ncepower
nces120p075t4.pdf pdf_icon

NCES120P035T4

PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.1. Size:854K  ncepower
nces120r036t4.pdf pdf_icon

NCES120P035T4

PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.2. Size:832K  ncepower
nces120r062t4.pdf pdf_icon

NCES120P035T4

PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

Datasheet: NCEP023NH85GU , NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , K3569 , NCES120P075T4 , NCES120R018T4 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A , BL10N60A-A .

History: R6025ANZ | IPD70R950CE | STP15NK50Z | SI2318CDS | IPA70R360P7S | KTK920BT | JSM7409B

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