Справочник MOSFET. NCES120P035T4

 

NCES120P035T4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCES120P035T4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 21 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 66 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 112 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.047 Ohm
   Тип корпуса: TO-247-4L

 Аналог (замена) для NCES120P035T4

 

 

NCES120P035T4 Datasheet (PDF)

 ..1. Size:800K  ncepower
 nces120p035t4.pdf

NCES120P035T4 NCES120P035T4

PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 5.1. Size:821K  ncepower
 nces120p075t4.pdf

NCES120P035T4 NCES120P035T4

PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.1. Size:854K  ncepower
 nces120r036t4.pdf

NCES120P035T4 NCES120P035T4

PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.2. Size:832K  ncepower
 nces120r062t4.pdf

NCES120P035T4 NCES120P035T4

PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

 7.3. Size:871K  ncepower
 nces120r018t4.pdf

NCES120P035T4 NCES120P035T4

PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high

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