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BL23N50-W Spec and Replacement


   Type Designator: BL23N50-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 271 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 279 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3PN

 BL23N50-W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL23N50-W Specs

 ..1. Size:720K  belling
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BL23N50-W

BL23N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

Detailed specifications: BL20N60-W , BL20N65-A , BL20N65-F , BL20N65-P , BL20N65-W , BL23N50-A , BL23N50-K , BL23N50-P , IRFP064N , BL25N40-A , BL25N40-F , BL25N40-P , BL25N40-W , BL25N50-F , BL25N50-W , BL25N60-F , BL25N60-W .

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