BL25N60-W Specs and Replacement
Type Designator: BL25N60-W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 420 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 399 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO-3PN
BL25N60-W substitution
BL25N60-W datasheet
bl25n60-w bl25n60-f.pdf
BL25N60 Power MOSFET 1 Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600 ... See More ⇒
bl25n65-w bl25n65-f.pdf
BL25N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica... See More ⇒
bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf
BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒
bl25n50-w bl25n50-f.pdf
BL25N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒
Detailed specifications: BL23N50-W , BL25N40-A , BL25N40-F , BL25N40-P , BL25N40-W , BL25N50-F , BL25N50-W , BL25N60-F , IRF540N , BL25N65-F , BL25N65-W , BL2N50-A , BL2N50-D , BL2N50-P , BL2N50-U , BL2N60-A , BL2N60-D .
Keywords - BL25N60-W MOSFET specs
BL25N60-W cross reference
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BL25N60-W substitution
BL25N60-W replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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