All MOSFET. BL25N60-W Datasheet

 

BL25N60-W Datasheet and Replacement


   Type Designator: BL25N60-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 420 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3PN

 BL25N60-W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL25N60-W Datasheet (PDF)

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BL25N60-W

BL25N60 Power MOSFET 1 Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600 ... See More ⇒

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BL25N60-W

BL25N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica... See More ⇒

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 bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf pdf_icon

BL25N60-W

BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

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BL25N60-W

BL25N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

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Datasheet: BL23N50-W , BL25N40-A , BL25N40-F , BL25N40-P , BL25N40-W , BL25N50-F , BL25N50-W , BL25N60-F , IRF540N , BL25N65-F , BL25N65-W , BL2N50-A , BL2N50-D , BL2N50-P , BL2N50-U , BL2N60-A , BL2N60-D .

History: BL20N65-W

Keywords - BL25N60-W MOSFET datasheet

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