All MOSFET. BL2N50-P Datasheet

 

BL2N50-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL2N50-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220

 BL2N50-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL2N50-P Datasheet (PDF)

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BL2N50-P BL2N50-P

BL2N50 Power MOSFET 1Description Step-Down Converter BL2N50, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para

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History: FRL9130H

 

 
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