FQI50N06 PDF and Equivalents Search

 

FQI50N06 Specs and Replacement

Type Designator: FQI50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO262 I2PAK

FQI50N06 substitution

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FQI50N06 datasheet

 ..1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf pdf_icon

FQI50N06

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

 ..2. Size:1062K  onsemi
 fqb50n06 fqi50n06.pdf pdf_icon

FQI50N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf pdf_icon

FQI50N06

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially... See More ⇒

 0.2. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf pdf_icon

FQI50N06

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee... See More ⇒

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Detailed specifications: FDS4480, FQH8N100C, FQI13N50C, FQI27N25, FQI27N25TUF085, FQI4N80, IRFW630B, FQI4N90, IRLZ44N, FQI5N60C, IRF644B, FQI7N60, IRF634B, FQI7N80, FDC6392S, FQI8N60C, FDP047AN08A0

Keywords - FQI50N06 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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