FQI50N06 - аналоги, параметры транзистора - Справочник транзисторов

FQI50N06 даташит

..1. Size:1038K fairchild semi
fqb50n06 fqi50n06.pdf pdf_icon

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially

..2. Size:1062K onsemi
fqb50n06 fqi50n06.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:1015K fairchild semi
fqb50n06tm fqi50n06tu.pdf pdf_icon

0.2. Size:1022K fairchild semi
fqb50n06ltm fqi50n06ltu.pdf pdf_icon

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee