BL3N100E-P Datasheet and Replacement
Type Designator: BL3N100E-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: TO-220
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BL3N100E-P Datasheet (PDF)
bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf
BL3N100E Power MOSFET 1Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P
bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf
BL3N100 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf
BL3N105 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf
BL3N150 Power MOSFET 1Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SM360R65CT2TL | NP180N04TUJ | ZVN4210GTC | WMM07N65C4 | TPCA8047-H | SM4186T9RL | APT10021JFLL
Keywords - BL3N100E-P MOSFET datasheet
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History: SM360R65CT2TL | NP180N04TUJ | ZVN4210GTC | WMM07N65C4 | TPCA8047-H | SM4186T9RL | APT10021JFLL
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