BL3N100E-P datasheet, аналоги, основные параметры

Наименование производителя: BL3N100E-P  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 119 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 63 ns

Cossⓘ - Выходная емкость: 45 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm

Тип корпуса: TO-220

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Аналог (замена) для BL3N100E-P

- подборⓘ MOSFET транзистора по параметрам

 

BL3N100E-P даташит

 ..1. Size:1014K  belling
 bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf pdf_icon

BL3N100E-P

BL3N100E Power MOSFET 1 Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P

 7.1. Size:660K  belling
 bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf pdf_icon

BL3N100E-P

BL3N100 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

 8.1. Size:659K  belling
 bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf pdf_icon

BL3N100E-P

BL3N105 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

 9.1. Size:1306K  belling
 bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf pdf_icon

BL3N100E-P

BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BL30N65-F, BL30N65-W, BL33N25-A, BL33N25-P, BL3N100-A, BL3N100-D, BL3N100E-A, BL3N100E-D, STP75NF75, BL3N100E-U, BL3N100-P, BL3N100-U, BL3N105-A, BL3N105-D, BL3N105-P, BL3N105-U, BL3N150-A