BL3N100E-P - Даташиты. Аналоги. Основные параметры
Наименование производителя: BL3N100E-P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 119 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 63 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
Тип корпуса: TO-220
Аналог (замена) для BL3N100E-P
BL3N100E-P Datasheet (PDF)
bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf
BL3N100E Power MOSFET 1 Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P
bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf
BL3N100 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf
BL3N105 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf
BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
Другие MOSFET... BL30N65-F , BL30N65-W , BL33N25-A , BL33N25-P , BL3N100-A , BL3N100-D , BL3N100E-A , BL3N100E-D , STP75NF75 , BL3N100E-U , BL3N100-P , BL3N100-U , BL3N105-A , BL3N105-D , BL3N105-P , BL3N105-U , BL3N150-A .
History: BL3N100-P
History: BL3N100-P
Список транзисторов
Обновления
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